Infineon 600V CoolMOS G7 SJ N-Channel MOSFET, 23 A, 600 V Enhancement, 8-Pin HSOF IPT60R102G7XTMA1

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Subtotal (1 pack of 5 units)*

PHP1,844.34

(exc. VAT)

PHP2,065.66

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 5PHP368.868PHP1,844.34
10 - 95PHP338.084PHP1,690.42
100 - 245PHP312.162PHP1,560.81
250 - 495PHP289.746PHP1,448.73
500 +PHP281.91PHP1,409.55

*price indicative

Packaging Options:
RS Stock No.:
214-4426
Mfr. Part No.:
IPT60R102G7XTMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

600V

Series

600V CoolMOS G7 SJ

Package Type

HSOF

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

102mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

141W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

34nC

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

800mV

Maximum Operating Temperature

150°C

Length

10.1mm

Standards/Approvals

No

Width

10.58mm

Height

2.4mm

Automotive Standard

No

This Infineon 600V Cool MOS G7 SJ MOSFET brings together the benefits of the improved 600V Cool MOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC)

It enables best-in-class R DS(on) in smallest footprint

It has provided production cost reduction

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