Infineon HEXFET Type N-Channel MOSFET, 51 A, 150 V, 3-Pin TO-263 IRFS52N15DTRLP
- RS Stock No.:
- 218-3120
- Mfr. Part No.:
- IRFS52N15DTRLP
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP1,157.10
(exc. VAT)
PHP1,296.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 3,100 unit(s) shipping from March 23, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP115.71 | PHP1,157.10 |
| 20 - 90 | PHP113.396 | PHP1,133.96 |
| 100 - 240 | PHP111.127 | PHP1,111.27 |
| 250 - 490 | PHP108.903 | PHP1,089.03 |
| 500 + | PHP106.725 | PHP1,067.25 |
*price indicative
- RS Stock No.:
- 218-3120
- Mfr. Part No.:
- IRFS52N15DTRLP
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 32mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 230W | |
| Typical Gate Charge Qg @ Vgs | 89nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.83 mm | |
| Length | 10.67mm | |
| Height | 9.65mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 32mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 230W | ||
Typical Gate Charge Qg @ Vgs 89nC | ||
Maximum Operating Temperature 175°C | ||
Width 4.83 mm | ||
Length 10.67mm | ||
Height 9.65mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IRFS series single N-channel IR MOSFET. This MOSFET is used in high frequency DC-DC converters, plasma Display Panel etc.
Lead-free
Significant reduction of switching losses
Related links
- Infineon HEXFET Type N-Channel MOSFET 150 V, 3-Pin TO-263
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- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
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- Infineon HEXFET Type N-Channel MOSFET 150 V, 3-Pin TO-263