Infineon HEXFET Type N-Channel MOSFET, 51 A, 150 V, 3-Pin TO-263

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Subtotal (1 reel of 800 units)*

PHP72,352.00

(exc. VAT)

PHP81,032.00

(inc. VAT)

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Units
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Per Reel*
800 - 800PHP90.44PHP72,352.00
1600 - 1600PHP86.823PHP69,458.40
2400 +PHP84.568PHP67,654.40

*price indicative

RS Stock No.:
218-3119
Mfr. Part No.:
IRFS52N15DTRLP
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

51A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

32mΩ

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

89nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

230W

Maximum Operating Temperature

175°C

Height

9.65mm

Length

10.67mm

Standards/Approvals

No

Width

4.83 mm

Automotive Standard

No

The Infineon IRFS series single N-channel IR MOSFET. This MOSFET is used in high frequency DC-DC converters, plasma Display Panel etc.

Lead-free

Significant reduction of switching losses

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