Infineon HEXFET Type N-Channel MOSFET, 6 A, 500 V, 3-Pin TO-252 IRFR825TRPBF

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Subtotal (1 pack of 15 units)*

PHP1,403.175

(exc. VAT)

PHP1,571.55

(inc. VAT)

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Units
Per Unit
Per Pack*
15 - 15PHP93.545PHP1,403.18
30 - 75PHP90.739PHP1,361.09
90 - 225PHP87.11PHP1,306.65
240 - 465PHP82.755PHP1,241.33
480 +PHP77.79PHP1,166.85

*price indicative

Packaging Options:
RS Stock No.:
218-3116
Mfr. Part No.:
IRFR825TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

500V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.3Ω

Typical Gate Charge Qg @ Vgs

34nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

119W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.67mm

Height

9.65mm

Width

4.83 mm

Automotive Standard

No

The Infineon HEXFET series single N-channel power MOSFET integrated with DPAK (TO-252) type package. This MOSFET is mainly used in UPS, SMPS etc.

Lower gate charge results in simpler drive requirements.

Higher gate voltage threshold offers improved noise immunity.

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