Infineon HEXFET Type P-Channel MOSFET, 13 A, 150 V, 3-Pin TO-263

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Subtotal (1 reel of 800 units)*

PHP60,784.80

(exc. VAT)

PHP68,079.20

(inc. VAT)

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Units
Per Unit
Per Reel*
800 - 800PHP75.981PHP60,784.80
1600 - 1600PHP72.943PHP58,354.40
2400 +PHP71.046PHP56,836.80

*price indicative

RS Stock No.:
218-3097
Mfr. Part No.:
IRF6215STRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

150V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

290mΩ

Typical Gate Charge Qg @ Vgs

44nC

Forward Voltage Vf

-1.6V

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

20 V

Length

10.67mm

Width

9.65 mm

Height

4.83mm

Standards/Approvals

No

Automotive Standard

No

The Infineon IRF series single P-Channel power MOSFET. This MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It is suitable for high current applications.

Fast switching

P-channel

175°C Operating Temperature

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