Infineon HEXFET Type P-Channel MOSFET, -13 A, -150 V TO-252 IRFR6215TRLPBF
- RS Stock No.:
- 258-3986
- Mfr. Part No.:
- IRFR6215TRLPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP297.92
(exc. VAT)
PHP333.67
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 1,465 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP59.584 | PHP297.92 |
| 10 - 95 | PHP57.796 | PHP288.98 |
| 100 - 245 | PHP54.328 | PHP271.64 |
| 250 - 495 | PHP49.438 | PHP247.19 |
| 500 + | PHP43.506 | PHP217.53 |
*price indicative
- RS Stock No.:
- 258-3986
- Mfr. Part No.:
- IRFR6215TRLPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -13A | |
| Maximum Drain Source Voltage Vds | -150V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 580mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.6V | |
| Maximum Power Dissipation Pd | 110W | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -13A | ||
Maximum Drain Source Voltage Vds -150V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 580mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.6V | ||
Maximum Power Dissipation Pd 110W | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon HEXFET power MOSFET is fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapour phase, infrared, or wave soldering techniques. The straight lead version is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
increased ruggedness
Wide availability from distribution partners
Industry standard qualification level
Related links
- Infineon HEXFET Type P-Channel MOSFET -150 V TO-252
- Infineon HEXFET Type P-Channel MOSFET 150 V, 3-Pin TO-263
- Infineon HEXFET Type P-Channel MOSFET 150 V, 3-Pin TO-263 IRF6215STRLPBF
- Infineon HEXFET Type N-Channel MOSFET -150 V TO-252
- Infineon HEXFET Type N-Channel MOSFET -150 V TO-252 IRFR6215TRPBF
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IRFR5410TRPBF
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IRFR5410TRLPBF