Infineon 600V CoolMOS CE Type N-Channel MOSFET, 3.7 A, 600 V, 3-Pin IPAK IPU60R2K1CEAKMA1
- RS Stock No.:
- 218-3082
- Mfr. Part No.:
- IPU60R2K1CEAKMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
PHP1,078.00
(exc. VAT)
PHP1,207.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 8,800 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 50 - 50 | PHP21.56 | PHP1,078.00 |
| 100 - 100 | PHP19.776 | PHP988.80 |
| 150 - 200 | PHP18.247 | PHP912.35 |
| 250 - 450 | PHP16.947 | PHP847.35 |
| 500 + | PHP16.489 | PHP824.45 |
*price indicative
- RS Stock No.:
- 218-3082
- Mfr. Part No.:
- IPU60R2K1CEAKMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.7A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | IPAK | |
| Series | 600V CoolMOS CE | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.1Ω | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 22W | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 6.7nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.41 mm | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.7A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type IPAK | ||
Series 600V CoolMOS CE | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.1Ω | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 22W | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 6.7nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Width 2.41 mm | ||
Height 6.22mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ CE series N-channel power MOSFET. The CoolMOS™ CE series provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. This MOSFET is used in PFC stages, hard switching PWM stages and resonant switching stages.
Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen free mold compound
Related links
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- Infineon CoolMOS CE Type N-Channel MOSFET 600 V Enhancement, 3-Pin IPAK
- Infineon CoolMOS CE Type N-Channel MOSFET 600 V Enhancement, 3-Pin IPAK IPU60R1K5CEAKMA2
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