Infineon CoolMOS CE Type N-Channel MOSFET, 5 A, 600 V Enhancement, 3-Pin IPAK IPU60R1K5CEAKMA2
- RS Stock No.:
- 217-2585
- Mfr. Part No.:
- IPU60R1K5CEAKMA2
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 50 units)*
PHP1,593.15
(exc. VAT)
PHP1,784.35
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 600 unit(s) shipping from August 31, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 50 - 50 | PHP31.863 | PHP1,593.15 |
| 100 - 100 | PHP29.21 | PHP1,460.50 |
| 150 - 200 | PHP26.95 | PHP1,347.50 |
| 250 - 450 | PHP25.019 | PHP1,250.95 |
| 500 + | PHP24.331 | PHP1,216.55 |
*price indicative
- RS Stock No.:
- 217-2585
- Mfr. Part No.:
- IPU60R1K5CEAKMA2
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | IPAK | |
| Series | CoolMOS CE | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 49W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 9.4nC | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type IPAK | ||
Series CoolMOS CE | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 49W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 9.4nC | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Width 6.22mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.
Narrow margins between typical and max R DS(on)
Reduced energy stored in output capacitance (E oss)
Good body diode ruggedness and reduced reverse recovery charge (Q rr)
Optimized integrated R g
Related links
- Infineon CoolMOS CE Type N-Channel MOSFET 600 V Enhancement, 3-Pin IPAK
- Infineon CoolMOS CE Type N-Channel MOSFET 600 V, 3-Pin TO-220FP
- Infineon CoolMOS CE Type N-Channel MOSFET 600 V, 3-Pin TO-220FP IPA60R1K5CEXKSA1
- Infineon CoolMOS CE Type N-Channel MOSFET 550 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS CE Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS CE Type N-Channel MOSFET 550 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS CE Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS CE Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-251