Infineon CoolMOS CE Type N-Channel MOSFET, 2.6 A, 600 V Enhancement, 3-Pin TO-251

This image is representative of the product range

Bulk discount available

Subtotal (1 tube of 75 units)*

PHP1,129.875

(exc. VAT)

PHP1,265.475

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 825 unit(s) shipping from December 26, 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Tube*
75 - 150PHP15.065PHP1,129.88
225 - 300PHP14.497PHP1,087.28
375 +PHP14.301PHP1,072.58

*price indicative

RS Stock No.:
217-2576
Mfr. Part No.:
IPS60R3K4CEAKMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.6A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-251

Series

CoolMOS CE

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3.4Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

38W

Typical Gate Charge Qg @ Vgs

6.7nC

Minimum Operating Temperature

-40°C

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.73mm

Width

2.4 mm

Height

9.82mm

Automotive Standard

No

The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.

Narrow margins between typical and max R DS(on)

Reduced energy stored in output capacitance (E oss)

Good body diode ruggedness and reduced reverse recovery charge (Q rr)

Optimized integrated R g

Related links