Infineon CoolMOS CE Type N-Channel MOSFET, 7.2 A, 650 V Enhancement, 3-Pin TO-251 IPS65R1K0CEAKMA2
- RS Stock No.:
- 214-9105
- Mfr. Part No.:
- IPS65R1K0CEAKMA2
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP976.475
(exc. VAT)
PHP1,093.65
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 1,450 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP39.059 | PHP976.48 |
| 50 - 75 | PHP37.888 | PHP947.20 |
| 100 - 225 | PHP36.373 | PHP909.33 |
| 250 - 475 | PHP34.554 | PHP863.85 |
| 500 + | PHP32.481 | PHP812.03 |
*price indicative
- RS Stock No.:
- 214-9105
- Mfr. Part No.:
- IPS65R1K0CEAKMA2
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7.2A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS CE | |
| Package Type | TO-251 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 37W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 15.3nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 6.22mm | |
| Width | 2.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7.2A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS CE | ||
Package Type TO-251 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 37W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 15.3nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 6.22mm | ||
Width 2.4 mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Easy to use/drive
Very high commutation ruggedness
Qualified for standard grade applications
Related links
- Infineon CoolMOS CE Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS CE Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS CE Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 IPD65R1K0CEAUMA1
- Infineon CoolMOS CE Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS CE Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS CE Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS CE Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-251 IPS60R3K4CEAKMA1
- Infineon CoolMOS CE Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-251 IPS60R800CEAKMA1