Infineon IPN Type N-Channel MOSFET, 10 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R450P7SATMA1

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PHP870.24

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PHP974.66

(inc. VAT)

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Per Unit
Per Pack*
20 - 20PHP43.512PHP870.24
40 - 80PHP39.881PHP797.62
100 - 220PHP36.808PHP736.16
240 - 480PHP34.154PHP683.08
500 +PHP33.246PHP664.92

*price indicative

Packaging Options:
RS Stock No.:
217-2548
Mfr. Part No.:
IPN70R450P7SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

700V

Package Type

SOT-223

Series

IPN

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

450mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

6.2W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

13.1nC

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

6.7mm

Standards/Approvals

No

Width

3.7 mm

Height

1.8mm

Automotive Standard

No

The Infineon CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.

Extremely low losses due to very low FOMR DS(on)*Qg and RDS(on)*Eoss

Excellent thermal behaviour

Integrated ESD protection diode

Low switching losses(Eoss)

Product validation acc. JEDEC Standard

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