Infineon IPN Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin SOT-223
- RS Stock No.:
- 217-2542
- Mfr. Part No.:
- IPN60R360P7SATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
PHP69,456.00
(exc. VAT)
PHP77,790.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 3,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | PHP23.152 | PHP69,456.00 |
| 6000 - 6000 | PHP22.261 | PHP66,783.00 |
| 9000 + | PHP21.98 | PHP65,940.00 |
*price indicative
- RS Stock No.:
- 217-2542
- Mfr. Part No.:
- IPN60R360P7SATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-223 | |
| Series | IPN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 111W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Width | 8.8 mm | |
| Length | 8.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-223 | ||
Series IPN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 111W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Width 8.8 mm | ||
Length 8.8mm | ||
Automotive Standard No | ||
The Infineon CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.
Best-fit performance superjunction technology
Cost-effective package solution
Best-in-class price/performance ratio
Related links
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