Infineon IPD Type N-Channel MOSFET, 6 A, 600 V Enhancement, 3-Pin TO-252 IPD60R600P7ATMA1
- RS Stock No.:
- 217-2528
- Mfr. Part No.:
- IPD60R600P7ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP1,058.40
(exc. VAT)
PHP1,185.40
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 200 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP52.92 | PHP1,058.40 |
| 40 - 80 | PHP48.516 | PHP970.32 |
| 100 - 220 | PHP44.806 | PHP896.12 |
| 240 - 480 | PHP41.618 | PHP832.36 |
| 500 + | PHP40.459 | PHP809.18 |
*price indicative
- RS Stock No.:
- 217-2528
- Mfr. Part No.:
- IPD60R600P7ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 41W | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 41W | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
600V P7 enables excellent FOM R DS(on)xE oss DS(on)xQ G
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Related links
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