Infineon IPD Type N-Channel MOSFET, 14.7 A, 600 V Enhancement, 3-Pin TO-252 IPD60R400CEAUMA1
- RS Stock No.:
- 217-2526
- Mfr. Part No.:
- IPD60R400CEAUMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP1,042.72
(exc. VAT)
PHP1,167.84
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 4,120 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP52.136 | PHP1,042.72 |
| 40 - 80 | PHP47.752 | PHP955.04 |
| 100 - 220 | PHP44.128 | PHP882.56 |
| 240 - 480 | PHP40.973 | PHP819.46 |
| 500 + | PHP39.803 | PHP796.06 |
*price indicative
- RS Stock No.:
- 217-2526
- Mfr. Part No.:
- IPD60R400CEAUMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 14.7A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.4nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 41W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Height | 2.41mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 14.7A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.4nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 41W | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Height 2.41mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.
Narrow margins between typical and max R DS(on)
Reduced energy stored in output capacitance (E oss)
Good body diode ruggedness and reduced reverse recovery charge (Q rr)
Optimized integrated R g
Related links
- Infineon IPD Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 IPD60R600P7ATMA1
- Infineon IPD Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 IPD60R600P7SAUMA1
- Infineon IPD Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 IPD60R1K5CEAUMA1
- Infineon IPD Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 IPD60R360P7SAUMA1