Infineon IPD Type N-Channel MOSFET, 5 A, 600 V Enhancement, 3-Pin TO-252 IPD60R1K5CEAUMA1
- RS Stock No.:
- 217-2521
- Mfr. Part No.:
- IPD60R1K5CEAUMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
PHP1,592.50
(exc. VAT)
PHP1,783.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 2,500 unit(s) shipping from March 19, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 50 - 50 | PHP31.85 | PHP1,592.50 |
| 100 - 100 | PHP30.895 | PHP1,544.75 |
| 150 - 200 | PHP29.968 | PHP1,498.40 |
| 250 - 450 | PHP29.069 | PHP1,453.45 |
| 500 + | PHP28.196 | PHP1,409.80 |
*price indicative
- RS Stock No.:
- 217-2521
- Mfr. Part No.:
- IPD60R1K5CEAUMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 49W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 9.4nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 49W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 9.4nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Automotive Standard No | ||
The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.
Narrow margins between typical and max R DS(on)
Reduced energy stored in output capacitance (E oss)
Good body diode ruggedness and reduced reverse recovery charge (Q rr)
Optimized integrated R g
Related links
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