Infineon CoolMOS Type N-Channel MOSFET, 8.5 A, 700 V N, 3-Pin TO-220 IPAN70R600P7SXKSA1
- RS Stock No.:
- 217-2502
- Mfr. Part No.:
- IPAN70R600P7SXKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP940.80
(exc. VAT)
PHP1,053.60
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 400 unit(s) shipping from December 29, 2025
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Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP47.04 | PHP940.80 |
| 40 - 80 | PHP43.142 | PHP862.84 |
| 100 - 220 | PHP39.799 | PHP795.98 |
| 240 - 480 | PHP36.952 | PHP739.04 |
| 500 + | PHP35.90 | PHP718.00 |
*price indicative
- RS Stock No.:
- 217-2502
- Mfr. Part No.:
- IPAN70R600P7SXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-220 | |
| Series | CoolMOS | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 82W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 20.5nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 16.1mm | |
| Height | 29.87mm | |
| Width | 4.8 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-220 | ||
Series CoolMOS | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 82W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 20.5nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 16.1mm | ||
Height 29.87mm | ||
Width 4.8 mm | ||
Automotive Standard No | ||
The Infineon 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of: Efficiency and thermals Ease-of-use EMI behaviour.
Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off
Highly performant technology
Low switching losses (E oss)
Highly efficient
Excellent thermal behaviour
Allowing high speed switching
Integrated protection Zener diode
Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
Finely graduated portfolio
Related links
- Infineon CoolMOS Type N-Channel MOSFET 700 V N, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPSA70R600P7SAKMA1
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V N, 3-Pin TO-220 IPA70R600P7SXKSA1
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V N, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 700 V N, 3-Pin TO-263 IPB65R110CFD7ATMA1
- Infineon CoolMOS Type N-Channel MOSFET 700 V N, 3-Pin TO-263 IPB65R155CFD7ATMA1
- Infineon CoolMOS Type N-Channel MOSFET 700 V N, 3-Pin TO-263 IPB65R041CFD7ATMA1
