Infineon CoolMOS Type N-Channel MOSFET, 8.5 A, 700 V N, 3-Pin TO-220
- RS Stock No.:
- 217-2500
- Mfr. Part No.:
- IPAN70R600P7SXKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 tube of 50 units)*
PHP1,738.50
(exc. VAT)
PHP1,947.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 400 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 100 | PHP34.77 | PHP1,738.50 |
| 150 - 200 | PHP33.422 | PHP1,671.10 |
| 250 + | PHP33.023 | PHP1,651.15 |
*price indicative
- RS Stock No.:
- 217-2500
- Mfr. Part No.:
- IPAN70R600P7SXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 20.5nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 82W | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.1mm | |
| Standards/Approvals | No | |
| Height | 29.87mm | |
| Width | 4.8 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 20.5nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 82W | ||
Maximum Operating Temperature 150°C | ||
Length 16.1mm | ||
Standards/Approvals No | ||
Height 29.87mm | ||
Width 4.8 mm | ||
Automotive Standard No | ||
The Infineon 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of: Efficiency and thermals Ease-of-use EMI behaviour.
Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off
Highly performant technology
Low switching losses (E oss)
Highly efficient
Excellent thermal behaviour
Allowing high speed switching
Integrated protection Zener diode
Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
Finely graduated portfolio
Related links
- Infineon CoolMOS Type N-Channel MOSFET 700 V N, 3-Pin TO-220 IPAN70R600P7SXKSA1
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- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPSA70R600P7SAKMA1
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V N, 3-Pin TO-220 IPA70R600P7SXKSA1
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V N, 3-Pin TO-220
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