Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 124 A, 30 V Enhancement, 8-Pin PDFN56
- RS Stock No.:
- 216-9657P
- Mfr. Part No.:
- TSM036N03PQ56
- Manufacturer:
- Taiwan Semiconductor
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Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
PHP4,596.80
(exc. VAT)
PHP5,148.40
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 4,975 unit(s), ready to ship from another location
Units | Per Unit |
|---|---|
| 50 - 75 | PHP91.936 |
| 100 - 225 | PHP84.408 |
| 250 - 975 | PHP82.68 |
| 1000 + | PHP76.756 |
*price indicative
- RS Stock No.:
- 216-9657P
- Mfr. Part No.:
- TSM036N03PQ56
- Manufacturer:
- Taiwan Semiconductor
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 124A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TSM025 | |
| Package Type | PDFN56 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6mm | |
| Standards/Approvals | IEC 61249-2-21, WEEE 2002/96/EC, RoHS 2011/65/EU | |
| Height | 1.05mm | |
| Width | 3.78 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 124A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TSM025 | ||
Package Type PDFN56 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Length 6mm | ||
Standards/Approvals IEC 61249-2-21, WEEE 2002/96/EC, RoHS 2011/65/EU | ||
Height 1.05mm | ||
Width 3.78 mm | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
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