onsemi FDMS86181 N-Channel MOSFET, 124 A, 100 V Enhancement, 8-Pin PQFN
- RS Stock No.:
- 181-1857
- Mfr. Part No.:
- FDMS86181
- Manufacturer:
- onsemi
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 181-1857
- Mfr. Part No.:
- FDMS86181
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 124A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PQFN | |
| Series | FDMS86181 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Length | 5.85mm | |
| Width | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 124A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PQFN | ||
Series FDMS86181 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Length 5.85mm | ||
Width 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Shielded Gate MOSFET Technology
Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A
Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A
ADD
50% lower Qrr than other MOSFET suppliers
Lowers switching noise/EMI
This product is general usage and suitable for many different applications.
Related links
- onsemi FDMS86181 N-Channel MOSFET 100 V Enhancement, 8-Pin PQFN FDMS86181
- onsemi PowerTrench N-Channel MOSFET 150 V Enhancement, 8-Pin PQFN
- onsemi FDMS N-Channel MOSFET 80 V Enhancement, 8-Pin PQFN
- onsemi NTMFS N-Channel MOSFET 60 V Enhancement, 8-Pin PQFN
- onsemi PowerTrench N-Channel MOSFET 100 V Enhancement, 8-Pin PQFN
- onsemi FDMS N-Channel MOSFET 120 V Enhancement, 8-Pin PQFN
- onsemi N-Channel MOSFET 60 V Enhancement, 8-Pin PQFN
- onsemi NTMFS N-Channel MOSFET 150 V Enhancement, 8-Pin PQFN