onsemi FDMS86181 Type N-Channel MOSFET, 124 A, 100 V Enhancement, 8-Pin PQFN FDMS86181
- RS Stock No.:
- 181-1895
- Mfr. Part No.:
- FDMS86181
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP780.08
(exc. VAT)
PHP873.69
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 2,990 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP156.016 | PHP780.08 |
| 25 - 245 | PHP140.416 | PHP702.08 |
| 250 - 1245 | PHP126.374 | PHP631.87 |
| 1250 - 2495 | PHP113.734 | PHP568.67 |
| 2500 + | PHP102.36 | PHP511.80 |
*price indicative
- RS Stock No.:
- 181-1895
- Mfr. Part No.:
- FDMS86181
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 124A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PQFN | |
| Series | FDMS86181 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5.85mm | |
| Width | 5 mm | |
| Height | 1.05mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 124A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PQFN | ||
Series FDMS86181 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5.85mm | ||
Width 5 mm | ||
Height 1.05mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Shielded Gate MOSFET Technology
Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A
Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A
ADD
50% lower Qrr than other MOSFET suppliers
Lowers switching noise/EMI
This product is general usage and suitable for many different applications.
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