Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin IPAK IPU80R900P7AKMA1
- RS Stock No.:
- 215-2559
- Mfr. Part No.:
- IPU80R900P7AKMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP1,097.60
(exc. VAT)
PHP1,229.40
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 1,400 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP54.88 | PHP1,097.60 |
| 40 - 80 | PHP50.307 | PHP1,006.14 |
| 100 - 220 | PHP46.395 | PHP927.90 |
| 240 - 480 | PHP43.088 | PHP861.76 |
| 500 + | PHP41.931 | PHP838.62 |
*price indicative
- RS Stock No.:
- 215-2559
- Mfr. Part No.:
- IPU80R900P7AKMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS P7 | |
| Package Type | IPAK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 45W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS P7 | ||
Package Type IPAK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 45W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 800V Cool MOS™ P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical fly back applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on) products.
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
Fully optimized portfolio
Related links
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 IPP80R900P7XKSA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-251 IPS80R900P7AKMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223 IPN80R900P7ATMA1
- Infineon 800V CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 IPD80R900P7ATMA1