Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-251
- RS Stock No.:
- 214-9109
- Mfr. Part No.:
- IPS80R900P7AKMA1
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 tube of 75 units)*
PHP4,390.875
(exc. VAT)
PHP4,917.75
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 1,425 unit(s) ready to ship from another location
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Units | Per Unit | Per Tube* |
|---|---|---|
| 75 - 150 | PHP58.545 | PHP4,390.88 |
| 225 - 300 | PHP56.789 | PHP4,259.18 |
| 375 + | PHP55.085 | PHP4,131.38 |
*price indicative
- RS Stock No.:
- 214-9109
- Mfr. Part No.:
- IPS80R900P7AKMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS P7 | |
| Package Type | TO-251 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 45W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.35 mm | |
| Length | 6.7mm | |
| Standards/Approvals | No | |
| Height | 6.22mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS P7 | ||
Package Type TO-251 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 45W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 2.35 mm | ||
Length 6.7mm | ||
Standards/Approvals No | ||
Height 6.22mm | ||
Automotive Standard No | ||
The Infineon latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation. These are Easy to drive and to parallel, enabling higher power density designs, BOM savings and lower assembly costs.
Fully optimized portfolio
Integrated Zener Diode ESD protection
Related links
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- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 800 V Enhancement, 3-Pin TO-251 IPS80R750P7AKMA1
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- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223
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