Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 60 V Enhancement, 3-Pin TO-252 IPD90N06S4L03ATMA2

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PHP909.44

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PHP1,018.57

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Per Unit
Per Pack*
10 - 10PHP90.944PHP909.44
20 - 90PHP83.421PHP834.21
100 - 240PHP76.946PHP769.46
250 - 490PHP71.517PHP715.17
500 +PHP69.518PHP695.18

*price indicative

Packaging Options:
RS Stock No.:
215-2520
Mfr. Part No.:
IPD90N06S4L03ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

OptiMOS-T2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

150W

Typical Gate Charge Qg @ Vgs

170nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS®-T2 Power-Transistor has 60V maximum drain source voltage, N-Ch, Automotive MOSFET, with DPAK(TO-252) package.

N-channel - Enhancement mode

Automotive AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Ultra low RDSon

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