Infineon OptiMOS 2 Type N-Channel MOSFET, 27 A, 100 V Enhancement, 3-Pin TO-252 IPD33CN10NGATMA1

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PHP664.44

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PHP744.18

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Per Unit
Per Pack*
20 - 20PHP33.222PHP664.44
40 - 80PHP32.225PHP644.50
100 - 220PHP31.259PHP625.18
240 - 480PHP30.321PHP606.42
500 +PHP29.411PHP588.22

*price indicative

Packaging Options:
RS Stock No.:
215-2506
Mfr. Part No.:
IPD33CN10NGATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

OptiMOS 2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

33mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

58W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

24nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).

N-channel, normal level

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Pb-free lead plating

Qualified according to JEDEC for target application

Ideal for high-frequency switching and synchronous rectification

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