Infineon 600V CoolMOS C7 Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-263 IPB60R180C7ATMA1

RS Stock No.:: 215-2498
Mfr. Part No.:: IPB60R180C7ATMA1
Manufacturer:: Infineon

Infineon 600V CoolMOS C7 Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-263 IPB60R180C7ATMA1

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Subtotal (1 pack of 5 units)*

PHP660.52

(exc. VAT)

PHP739.78

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

785 unit(s) ready to ship from another location

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Units	Per Unit	Per Pack*
5 - 5	PHP132.104	PHP660.52
10 - 95	PHP121.03	PHP605.15
100 - 245	PHP111.796	PHP558.98
250 - 495	PHP103.796	PHP518.98
500 +	PHP100.922	PHP504.61

*price indicative

RS Stock No.:: 215-2498
Mfr. Part No.:: IPB60R180C7ATMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-263
	Series	600V CoolMOS C7
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	180mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	68W
	Typical Gate Charge Qg @ Vgs	24nC
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Length	10.31mm
	Standards/Approvals	No
	Height	15.88mm
	Width	4.57 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-263
	Series 600V CoolMOS C7
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 180mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 68W
	Typical Gate Charge Qg @ Vgs 24nC
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Length 10.31mm
	Standards/Approvals No
	Height 15.88mm
	Width 4.57 mm
	Automotive Standard No

Datasheet - IPB60R180C7ATMA1

The Infineon 600V Cool MOS™ C7 super junction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the Cool MOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyper data centres and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by Cool MOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V Cool MOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ∼10% for PSU energy loss.

Reduced switching loss parameters such as Q G, C oss, E oss

Best-in-class figure of merit Q G*R DS(on)

Increased switching frequency

Best R (on)*A in the world

Rugged body diode

Infineon 600V CoolMOS C7 Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-263 IPB60R180C7ATMA1

FREE delivery for orders over ₱3,000.00

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