Infineon CoolMOS C7 Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-220 IPP60R180C7XKSA1
- RS Stock No.:
- 214-9095
- Mfr. Part No.:
- IPP60R180C7XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP774.20
(exc. VAT)
PHP867.10
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 370 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP154.84 | PHP774.20 |
| 10 - 95 | PHP141.86 | PHP709.30 |
| 100 - 245 | PHP131.042 | PHP655.21 |
| 250 - 495 | PHP121.664 | PHP608.32 |
| 500 + | PHP118.294 | PHP591.47 |
*price indicative
- RS Stock No.:
- 214-9095
- Mfr. Part No.:
- IPP60R180C7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | CoolMOS C7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Power Dissipation Pd | 68W | |
| Forward Voltage Vf | 0.9V | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Width | 4.57 mm | |
| Height | 9.45mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series CoolMOS C7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Power Dissipation Pd 68W | ||
Forward Voltage Vf 0.9V | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Width 4.57 mm | ||
Height 9.45mm | ||
Automotive Standard No | ||
The Infineon CoolMOS Series is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. These are Suitable for hard and soft switching. Suitable for applications such as server, telecom and solar.
Qualified for industrial grade applications according to JEDEC
Suitable for hard and soft switching
Related links
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 IPW60R180C7XKSA1
- Infineon CoolMOS C7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS C7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-220 IPP65R190C7FKSA1
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon 600V CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon 600V CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 IPB60R180C7ATMA1