Infineon CoolMOS C7 Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-220 IPP60R180C7XKSA1
- RS Stock No.:
- 214-9095
- Mfr. Part No.:
- IPP60R180C7XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
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View bulk pricing optionsSubtotal (1 pack of 5 units)*
PHP1,128.18
(exc. VAT)
PHP1,263.56
(inc. VAT)
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In Stock
- Plus 270 unit(s) shipping from August 31, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP225.636 | PHP1,128.18 |
| 10 - 95 | PHP206.72 | PHP1,033.60 |
| 100 - 245 | PHP190.956 | PHP954.78 |
| 250 - 495 | PHP177.29 | PHP886.45 |
| 500 + | PHP172.378 | PHP861.89 |
*price indicative
- RS Stock No.:
- 214-9095
- Mfr. Part No.:
- IPP60R180C7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | CoolMOS C7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 68W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Height | 9.45mm | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Width | 4.57mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series CoolMOS C7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 68W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Height 9.45mm | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Width 4.57mm | ||
Automotive Standard No | ||
The Infineon CoolMOS Series is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. These are Suitable for hard and soft switching. Suitable for applications such as server, telecom and solar.
Qualified for industrial grade applications according to JEDEC
Suitable for hard and soft switching
Related links
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 IPW60R180C7XKSA1
- Infineon 600V CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Infineon 600V CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 IPB60R180C7ATMA1
- Infineon CoolMOS C7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS C7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-220 IPP65R190C7FKSA1