Infineon CoolMOS C7 Type N-Channel MOSFET, 10 A, 650 V Enhancement, 3-Pin TO-220 IPA65R125C7XKSA1

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Subtotal (1 pack of 5 units)*

PHP1,290.27

(exc. VAT)

PHP1,445.10

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 5PHP258.054PHP1,290.27
10 - 95PHP236.548PHP1,182.74
100 - 245PHP218.148PHP1,090.74
250 - 495PHP202.618PHP1,013.09
500 +PHP197.122PHP985.61

*price indicative

Packaging Options:
RS Stock No.:
215-2482
Mfr. Part No.:
IPA65R125C7XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

CoolMOS C7

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

35nC

Maximum Power Dissipation Pd

32W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon’s Cool MOS™ C7 super junction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.

Improved safety margin and suitable for both SMPS and solar inverter applications

Lowest conduction losses/package

Low switching losses

Better light load efficiency

Increasing power density

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