Infineon OptiMOS 5 Type N-Channel MOSFET, 176 A, 25 V Enhancement, 8-Pin TSDSON BSZ014NE2LS5IFATMA1
- RS Stock No.:
- 214-8984
- Mfr. Part No.:
- BSZ014NE2LS5IFATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
PHP1,160.30
(exc. VAT)
PHP1,299.50
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- 60 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP116.03 | PHP1,160.30 |
| 20 - 90 | PHP106.271 | PHP1,062.71 |
| 100 - 240 | PHP98.19 | PHP981.90 |
| 250 - 490 | PHP91.179 | PHP911.79 |
| 500 + | PHP88.585 | PHP885.85 |
*price indicative
- RS Stock No.:
- 214-8984
- Mfr. Part No.:
- BSZ014NE2LS5IFATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 176A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | TSDSON | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Forward Voltage Vf | 0.6V | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5.35mm | |
| Width | 6.1mm | |
| Height | 1.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 176A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type TSDSON | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.45mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16V | ||
Forward Voltage Vf 0.6V | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5.35mm | ||
Width 6.1mm | ||
Height 1.2mm | ||
Automotive Standard No | ||
The Infineon range offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and Strong IRFET families. With the OptiMOS-5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Monolithic integrated Schottky like diode
100% avalanche tested
Related links
- Infineon OptiMOS 5 Type N-Channel MOSFET 25 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS 5 Type N-Channel MOSFET 30 V N, 8-Pin TSDSON
- Infineon OptiMOS 5 Type N-Channel MOSFET 30 V N, 8-Pin TSDSON BSZ0589NSATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET & Diode 80 V Enhancement, 8-Pin HSOG
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V Enhancement, 8-Pin HSOF
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSOF
- Infineon OptiMOS 5 Type N-Channel MOSFET 80 V Enhancement, 8-Pin HSOF