onsemi FCH029N Type N-Channel MOSFET, 75 A, 650 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 214-8790
- Mfr. Part No.:
- FCH029N65S3-F155
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 30 units)*
PHP27,025.35
(exc. VAT)
PHP30,268.38
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Supply shortage
- 60 left, ready to ship from another location
Our current stock is limited and our suppliers are expecting shortages.
Units | Per Unit | Per Tube* |
|---|---|---|
| 30 - 30 | PHP900.845 | PHP27,025.35 |
| 60 - 60 | PHP873.82 | PHP26,214.60 |
| 90 + | PHP847.605 | PHP25,428.15 |
*price indicative
- RS Stock No.:
- 214-8790
- Mfr. Part No.:
- FCH029N65S3-F155
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | FCH029N | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 201nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 463W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.9mm | |
| Standards/Approvals | These Devices are Pb-Free and are RoHS | |
| Width | 21.1 mm | |
| Height | 5.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series FCH029N | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 201nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 463W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 15.9mm | ||
Standards/Approvals These Devices are Pb-Free and are RoHS | ||
Width 21.1 mm | ||
Height 5.1mm | ||
Automotive Standard No | ||
The ON Semiconductor MOSFET is brand−new high voltage super−junction MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Pb−Free
RoHS compliant
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