onsemi NTH4LN019N Type N-Channel MOSFET, 75 A, 650 V Enhancement, 4-Pin TO-247
- RS Stock No.:
- 221-6707
- Mfr. Part No.:
- NTH4LN019N65S3H
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 450 units)*
PHP540,222.75
(exc. VAT)
PHP605,049.30
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from May 29, 2026
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Units | Per Unit | Per Tube* |
|---|---|---|
| 450 - 450 | PHP1,200.495 | PHP540,222.75 |
| 900 - 900 | PHP1,154.319 | PHP519,443.55 |
| 1350 + | PHP1,139.71 | PHP512,869.50 |
*price indicative
- RS Stock No.:
- 221-6707
- Mfr. Part No.:
- NTH4LN019N65S3H
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | NTH4LN019N | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 19.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 625W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 282nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 22.74mm | |
| Standards/Approvals | These Devices are Pb-Free and are RoHS | |
| Width | 5.2 mm | |
| Length | 15.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series NTH4LN019N | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 19.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 625W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 282nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 22.74mm | ||
Standards/Approvals These Devices are Pb-Free and are RoHS | ||
Width 5.2 mm | ||
Length 15.8mm | ||
Automotive Standard No | ||
The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Ultra low gate charge
low effective output capacitance 2495 pF
100% avalanche tested
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