Infineon CoolMOS N-Channel MOSFET, 2 A, 800 V Enhancement, 3-Pin TO-252 SPD02N80C3ATMA1
- RS Stock No.:
- 214-4479
- Distrelec Article No.:
- 304-39-428
- Mfr. Part No.:
- SPD02N80C3ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (15 units, in packs of 15)*
PHP993.90
(exc. VAT)
PHP1,113.15
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 2,280 unit(s) shipping from September 28, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 15 - 15 | PHP66.26 | PHP993.90 |
| 30 - 75 | PHP64.273 | PHP964.10 |
| 90 - 225 | PHP62.344 | PHP935.16 |
| 240 - 465 | PHP60.474 | PHP907.11 |
| 480 + | PHP58.661 | PHP879.92 |
*price indicative
- RS Stock No.:
- 214-4479
- Distrelec Article No.:
- 304-39-428
- Mfr. Part No.:
- SPD02N80C3ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-252 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.7Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Maximum Power Dissipation Pd | 42W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-252 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.7Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Maximum Power Dissipation Pd 42W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC1 | ||
Automotive Standard No | ||
This Infineon Cool MOS MOSFET uses new revolutionary high voltage technology and has high peak current capability.
It has ultra low gate charge
Related links
- Infineon CoolMOS N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS N-Channel MOSFET 800 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223