Infineon OptiMOS 5 Type N-Channel MOSFET, 62 A, 100 V N, 8-Pin PQFN
- RS Stock No.:
- 214-4342
- Mfr. Part No.:
- BSZ096N10LS5ATMA1
- Manufacturer:
- Infineon
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PHP237,635.00
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PHP266,150.00
(inc. VAT)
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Units | Per Unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | PHP47.527 | PHP237,635.00 |
| 10000 - 10000 | PHP45.699 | PHP228,495.00 |
| 15000 + | PHP45.121 | PHP225,605.00 |
*price indicative
- RS Stock No.:
- 214-4342
- Mfr. Part No.:
- BSZ096N10LS5ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | OptiMOS 5 | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.5mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 69W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series OptiMOS 5 | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.5mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 69W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
Infineon OptiMOS 5 Series MOSFET, 100V Drain Source Voltage, 62A Continuous Drain Current - BSZ096N10LS5ATMA1
This MOSFET is a high-voltage switching transistor designed for surface-mounted power applications where efficient conduction and a compact form factor are required. It operates across a wide thermal span and is suitable for demanding electronic circuits that need robust current handling and low conduction loss without specifying mechanical sizes here.
Features and Benefits:
• Very low on-resistance 13.5mΩ reduces conduction losses
• High continuous drain current 62A supports heavy-load switching
• 100V drain-source rating enables high-voltage operation
• Maximum power dissipation 69W allows elevated thermal loading
• Typical gate charge 12nC permits faster switching at high frequency
• Gate-source withstand 20V provides margin for gate-drive signals
• High continuous drain current 62A supports heavy-load switching
• 100V drain-source rating enables high-voltage operation
• Maximum power dissipation 69W allows elevated thermal loading
• Typical gate charge 12nC permits faster switching at high frequency
• Gate-source withstand 20V provides margin for gate-drive signals
Applications
• Suitable for synchronous buck converters in power supplies
• Ideal for motor-drive stages requiring high continuous current
• Used with fast-switching regulators in telecoms equipment
• Can be used for battery management in high-voltage systems
• Employed in server power distribution and data centre supplies
• Ideal for motor-drive stages requiring high continuous current
• Used with fast-switching regulators in telecoms equipment
• Can be used for battery management in high-voltage systems
• Employed in server power distribution and data centre supplies
What temperature extremes will it tolerate during operation?
It is specified to function from -55°C up to 150°C, allowing use in thermally challenging environments.
Which mounting and pin arrangement does it use for PCB assembly?
The component is a surface-mount device provided in an 8-pin PQFN package designed for compact board-level implementation.
What is the conduction channel type and how does that affect circuit design?
It employs an N-channel enhancement device, which requires suitable gate-drive polarity and is optimised for low-side or synchronous switching topologies.
How does the forward voltage influence switching performance?
The forward voltage of 1.2V indicates the diode conduction characteristic during body-diode events and informs conduction loss calculations during commutation.
Related links
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