STMicroelectronics SCT1000N170 N-Channel MOSFET, 7 A, 1.7 kV Enhancement, 3-Pin Hip-247 SCT1000N170
- RS Stock No.:
- 212-2092
- Mfr. Part No.:
- SCT1000N170
- Manufacturer:
- STMicroelectronics
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| 1 - 4 | PHP844.36 |
| 5 - 9 | PHP819.03 |
| 10 + | PHP794.45 |
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- RS Stock No.:
- 212-2092
- Mfr. Part No.:
- SCT1000N170
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 1.7kV | |
| Series | SCT1000N170 | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.66Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.5V | |
| Typical Gate Charge Qg @ Vgs | 13.3nC | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Operating Temperature | 200°C | |
| Width | 20.15mm | |
| Standards/Approvals | No | |
| Length | 15.75mm | |
| Height | 5.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 1.7kV | ||
Series SCT1000N170 | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.66Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.5V | ||
Typical Gate Charge Qg @ Vgs 13.3nC | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Operating Temperature 200°C | ||
Width 20.15mm | ||
Standards/Approvals No | ||
Length 15.75mm | ||
Height 5.15mm | ||
Automotive Standard No | ||
SiC MOSFET
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability.
High speed switching performance
Very fast and robust intrinsic body diode
Low capacitances
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