STMicroelectronics SCT1000N170 Type N-Channel MOSFET, 7 A, 1700 V Enhancement, 3-Pin Hip-247
- RS Stock No.:
- 212-2091
- Mfr. Part No.:
- SCT1000N170
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 30 units)*
PHP23,504.88
(exc. VAT)
PHP26,325.48
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from August 31, 2026
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Units | Per Unit | Per Tube* |
|---|---|---|
| 30 - 90 | PHP783.496 | PHP23,504.88 |
| 120 - 240 | PHP767.826 | PHP23,034.78 |
| 270 - 480 | PHP752.47 | PHP22,574.10 |
| 510 + | PHP737.42 | PHP22,122.60 |
*price indicative
- RS Stock No.:
- 212-2091
- Mfr. Part No.:
- SCT1000N170
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Package Type | Hip-247 | |
| Series | SCT1000N170 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.66Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 4.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13.3nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | No | |
| Height | 5.15mm | |
| Width | 20.15 mm | |
| Length | 15.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Package Type Hip-247 | ||
Series SCT1000N170 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.66Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 4.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13.3nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals No | ||
Height 5.15mm | ||
Width 20.15 mm | ||
Length 15.75mm | ||
Automotive Standard No | ||
SiC MOSFET
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability.
High speed switching performance
Very fast and robust intrinsic body diode
Low capacitances
Related links
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