STMicroelectronics SCTW35 Type N-Channel MOSFET, 45 A, 650 V Enhancement, 3-Pin Hip-247
- RS Stock No.:
- 201-0859
- Mfr. Part No.:
- SCTW35N65G2V
- Manufacturer:
- STMicroelectronics
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Subtotal (1 tube of 30 units)*
PHP30,157.11
(exc. VAT)
PHP33,775.95
(inc. VAT)
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In Stock
- 840 unit(s) ready to ship from another location
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Units | Per Unit | Per Tube* |
|---|---|---|
| 30 - 90 | PHP1,005.237 | PHP30,157.11 |
| 120 - 240 | PHP985.132 | PHP29,553.96 |
| 270 - 480 | PHP965.429 | PHP28,962.87 |
| 510 - 990 | PHP946.12 | PHP28,383.60 |
| 1020 + | PHP927.198 | PHP27,815.94 |
*price indicative
- RS Stock No.:
- 201-0859
- Mfr. Part No.:
- SCTW35N65G2V
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SCTW35 | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Maximum Power Dissipation Pd | 240W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | No | |
| Height | 15.75mm | |
| Width | 5.15 mm | |
| Length | 14.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SCTW35 | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Maximum Power Dissipation Pd 240W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals No | ||
Height 15.75mm | ||
Width 5.15 mm | ||
Length 14.8mm | ||
Automotive Standard No | ||
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 45A and drain to source resistance 45m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Low capacitance
Related links
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