STMicroelectronics SCTW35 Type N-Channel MOSFET, 45 A, 650 V Enhancement, 3-Pin Hip-247 SCTW35N65G2V
- RS Stock No.:
- 201-0860
- Mfr. Part No.:
- SCTW35N65G2V
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
PHP1,017.82
(exc. VAT)
PHP1,139.96
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 847 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 4 | PHP1,017.82 |
| 5 - 9 | PHP997.07 |
| 10 + | PHP935.85 |
*price indicative
- RS Stock No.:
- 201-0860
- Mfr. Part No.:
- SCTW35N65G2V
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SCTW35 | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 240W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 200°C | |
| Length | 14.8mm | |
| Width | 5.15 mm | |
| Standards/Approvals | No | |
| Height | 15.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SCTW35 | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 240W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 200°C | ||
Length 14.8mm | ||
Width 5.15 mm | ||
Standards/Approvals No | ||
Height 15.75mm | ||
Automotive Standard No | ||
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 45A and drain to source resistance 45m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Low capacitance
Related links
- STMicroelectronics SCTW35 Type N-Channel MOSFET 650 V Enhancement, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Depletion, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Depletion, 3-Pin Hip-247 SCTW35N65G2VAG
- STMicroelectronics SCTWA35N65G2V Type N-Channel SiC Power Module 650 V Enhancement, 3-Pin Hip-247 SCTWA35N65G2V
- STMicroelectronics SCTWA35N65G2V Type N-Channel SiC Power Module 650 V Enhancement, 3-Pin Hip-247
- STMicroelectronics SCTWA35N65G2V-4 Type N-Channel MOSFET 650 V Enhancement, 4-Pin Hip-247 SCTWA35N65G2V-4
- STMicroelectronics SCTWA35N65G2V-4 Type N-Channel MOSFET 650 V Enhancement, 4-Pin Hip-247
- STMicroelectronics Type N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247