STMicroelectronics N-Channel MOSFET, 72 A, 650 V, 4-Pin TO-247-4 STW68N65DM6-4AG

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RS Stock No.:
210-8748
Mfr. Part No.:
STW68N65DM6-4AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

72 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

39 mΩ

Maximum Gate Threshold Voltage

4.75V

Number of Elements per Chip

1

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies andZVS phase-shift converters.

Designed for automotive applications
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Excellent switching performance thanks to the extra driving source pin
Zener-protected

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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