STMicroelectronics Type N-Channel MOSFET, 72 A, 600 V Enhancement, 3-Pin TO-247 STWA75N60M6
- RS Stock No.:
- 195-2681
- Mfr. Part No.:
- STWA75N60M6
- Manufacturer:
- STMicroelectronics
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|---|---|
| 1 - 4 | PHP725.64 |
| 5 - 9 | PHP715.21 |
| 10 + | PHP677.12 |
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- RS Stock No.:
- 195-2681
- Mfr. Part No.:
- STWA75N60M6
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 72A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 36mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Maximum Power Dissipation Pd | 446W | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.9mm | |
| Width | 5.1mm | |
| Standards/Approvals | No | |
| Height | 21.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 72A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 36mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Maximum Power Dissipation Pd 446W | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Operating Temperature 150°C | ||
Length 15.9mm | ||
Width 5.1mm | ||
Standards/Approvals No | ||
Height 21.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Lower RDS(on) per area vs previous generation
Low gate input resistance
Zener-protected
Related links
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
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- IXYS HiperFET 72 A 4-Pin SOT-227
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- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252