Vishay SiR882BDP Type N-Channel MOSFET, 67.5 A, 100 V Enhancement, 8-Pin SO-8
- RS Stock No.:
- 210-5006
- Mfr. Part No.:
- SiR882BDP-T1-RE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
PHP204,045.00
(exc. VAT)
PHP228,531.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from July 06, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | PHP68.015 | PHP204,045.00 |
| 6000 + | PHP66.655 | PHP199,965.00 |
*price indicative
- RS Stock No.:
- 210-5006
- Mfr. Part No.:
- SiR882BDP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 67.5A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8 | |
| Series | SiR882BDP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 83.3W | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.26 mm | |
| Length | 6.25mm | |
| Standards/Approvals | No | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 67.5A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8 | ||
Series SiR882BDP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 83.3W | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Operating Temperature 150°C | ||
Width 5.26 mm | ||
Length 6.25mm | ||
Standards/Approvals No | ||
Height 1.12mm | ||
Automotive Standard No | ||
The Vishay N-Channel 100 V (D-S) MOSFET has PowerPAK SO-8 package type.
TrenchFET Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
100 % Rg and UIS tested
Related links
- Vishay SiR882BDP Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SiR882BDP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8
- Vishay Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8DC
- Vishay SiR180ADP Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8
- Vishay SiR680LDP Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8
- Vishay SiDR626LDP Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8
- Vishay SiR104LDP Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Vishay SiDR104ADP Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8