Vishay SiR680LDP Type N-Channel MOSFET, 130 A, 80 V Enhancement, 8-Pin SO-8 SIR680LDP-T1-RE3

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Subtotal (1 pack of 5 units)*

PHP727.55

(exc. VAT)

PHP814.85

(inc. VAT)

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Being discontinued
  • Final 5,720 unit(s), ready to ship from another location
Units
Per Unit
Per Pack*
5 - 5PHP145.51PHP727.55
10 - 95PHP130.962PHP654.81
100 - 495PHP117.866PHP589.33
500 - 995PHP106.082PHP530.41
1000 +PHP95.474PHP477.37

*price indicative

Packaging Options:
RS Stock No.:
210-5003
Mfr. Part No.:
SIR680LDP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

130A

Maximum Drain Source Voltage Vds

80V

Package Type

SO-8

Series

SiR680LDP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.33mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

90nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

104W

Maximum Operating Temperature

150°C

Height

1.12mm

Length

6.25mm

Standards/Approvals

No

Width

5.26 mm

Automotive Standard

No

The Vishay N-Channel 80 V (D-S) MOSFET has PowerPAK SO-8 package type with 130 A drain current.

TrenchFET® Gen IV power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

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