DiodesZetex Dual DMN3061 1 Type N-Channel MOSFET, 3.4 A, 30 V Enhancement, 6-Pin TSOT DMN3061SVT-7
- RS Stock No.:
- 206-0083
- Mfr. Part No.:
- DMN3061SVT-7
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 pack of 25 units)*
PHP551.25
(exc. VAT)
PHP617.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 2,475 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP22.05 | PHP551.25 |
| 50 - 75 | PHP19.845 | PHP496.13 |
| 100 - 225 | PHP17.861 | PHP446.53 |
| 250 - 975 | PHP16.075 | PHP401.88 |
| 1000 + | PHP14.468 | PHP361.70 |
*price indicative
- RS Stock No.:
- 206-0083
- Mfr. Part No.:
- DMN3061SVT-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMN3061 | |
| Package Type | TSOT | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.08W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.7V | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Width | 1.6 mm | |
| Height | 0.9mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMN3061 | ||
Package Type TSOT | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.08W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.7V | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Width 1.6 mm | ||
Height 0.9mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The DiodesZetex 30V dual N- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20 V with 0.88W thermal power dissipation.
Low input capacitance
Fast switching speed
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