Vishay Dual SiSF06DN 2 Type N-Channel MOSFET, 101 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISF06DN-T1-GE3

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Subtotal (1 pack of 20 units)*

PHP1,070.16

(exc. VAT)

PHP1,198.58

(inc. VAT)

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Units
Per Unit
Per Pack*
20 - 80PHP53.508PHP1,070.16
100 - 480PHP48.672PHP973.44
500 - 980PHP44.598PHP891.96
1000 - 1480PHP41.188PHP823.76
1500 +PHP38.235PHP764.70

*price indicative

Packaging Options:
RS Stock No.:
204-7260
Mfr. Part No.:
SISF06DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

101A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212

Series

SiSF06DN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0045Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

69.4W

Typical Gate Charge Qg @ Vgs

30nC

Minimum Operating Temperature

-55°C

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.3mm

Height

0.73mm

Number of Elements per Chip

2

Automotive Standard

No

The Vishay Common Drain Dual N-Channel 30 V (S1-S2) MOSFET is an integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package.

Very low source-to-source on resistance

TrenchFET Gen IV power MOSFET

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