Vishay SiDR140DP Type N-Channel MOSFET, 100 A, 25 V Enhancement, 8-Pin SO-8 SIDR140DP-T1-RE3
- RS Stock No.:
- 204-7236
- Mfr. Part No.:
- SIDR140DP-T1-RE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP1,011.75
(exc. VAT)
PHP1,133.16
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from July 13, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 90 | PHP101.175 | PHP1,011.75 |
| 100 - 490 | PHP98.14 | PHP981.40 |
| 500 - 990 | PHP94.214 | PHP942.14 |
| 1000 - 1490 | PHP89.503 | PHP895.03 |
| 1500 + | PHP84.133 | PHP841.33 |
*price indicative
- RS Stock No.:
- 204-7236
- Mfr. Part No.:
- SIDR140DP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | SiDR140DP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.67mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 113nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.15mm | |
| Standards/Approvals | No | |
| Width | 5.15 mm | |
| Height | 0.61mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series SiDR140DP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.67mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 113nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 6.15mm | ||
Standards/Approvals No | ||
Width 5.15 mm | ||
Height 0.61mm | ||
Automotive Standard No | ||
The Vishay N-Channel 25 V (D-S) MOSFET has a top side cooling feature provides additional venue for thermal transfer. It has optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.
100 % Rg and UIS tested
TrenchFET Gen IV power MOSFET
Related links
- Vishay SiDR140DP Type N-Channel MOSFET 25 V Enhancement, 8-Pin SO-8
- Vishay SiDR220DP Type N-Channel MOSFET 25 V Enhancement, 8-Pin SO-8 SIDR220DP-T1-RE3
- Vishay SiDR220DP Type N-Channel MOSFET 25 V Enhancement, 8-Pin SO-8
- Vishay SiDR392DP Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 SIDR392DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SIR680DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 SIRA90DP-T1-RE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SIDR638DP-T1-RE3
- Vishay SiDR392DP Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8