Vishay SiHB17N80E N-Channel MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-263 SIHB17N80E-GE3
- RS Stock No.:
- 204-7227
- Mfr. Part No.:
- SIHB17N80E-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (5 units, in packs of 5)*
PHP1,886.15
(exc. VAT)
PHP2,112.50
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Temporarily out of stock
- Shipping from March 08, 2027
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | PHP377.23 | PHP1,886.15 |
| 50 - 95 | PHP342.814 | PHP1,714.07 |
| 100 - 245 | PHP314.226 | PHP1,571.13 |
| 250 - 495 | PHP290.134 | PHP1,450.67 |
| 500 + | PHP269.484 | PHP1,347.42 |
*price indicative
- RS Stock No.:
- 204-7227
- Mfr. Part No.:
- SIHB17N80E-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-263 | |
| Series | SiHB17N80E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 290mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 208W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 122nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Height | 15.88mm | |
| Standards/Approvals | No | |
| Width | 4.83mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-263 | ||
Series SiHB17N80E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 290mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 208W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 122nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Height 15.88mm | ||
Standards/Approvals No | ||
Width 4.83mm | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET has a low figure-of-merit (FOM) Ron x Qg and a low input capacitance (Ciss).
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
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