Vishay SiJ128LDP Type N-Channel MOSFET, 25.5 A, 80 V Enhancement, 4-Pin SO-8

This image is representative of the product range

Subtotal (1 reel of 3000 units)*

PHP147,477.00

(exc. VAT)

PHP165,174.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from July 06, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Reel*
3000 +PHP49.159PHP147,477.00

*price indicative

RS Stock No.:
204-7216
Mfr. Part No.:
SiJ128LDP-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

25.5A

Maximum Drain Source Voltage Vds

80V

Package Type

SO-8

Series

SiJ128LDP

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

15.6mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

30nC

Maximum Power Dissipation Pd

22.3W

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

1.14 mm

Height

6.25mm

Length

5.25mm

Automotive Standard

No

The Vishay N-Channel 80 V (D-S) MOSFET has a very low Qg and Qoss reduce power loss and improve efficiency. It has a very low Qg and Qoss reduce power loss and improve efficiency.

TrenchFET Gen IV power MOSFET

100 % Rg and UIS tested

Related links