Vishay SiJ128LDP Type N-Channel MOSFET, 25.5 A, 80 V Enhancement, 4-Pin SO-8 SiJ128LDP-T1-GE3

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Subtotal (1 pack of 20 units)*

PHP1,053.36

(exc. VAT)

PHP1,179.76

(inc. VAT)

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Units
Per Unit
Per Pack*
20 - 80PHP52.668PHP1,053.36
100 - 480PHP51.088PHP1,021.76
500 - 980PHP49.045PHP980.90
1000 - 1480PHP46.593PHP931.86
1500 +PHP43.797PHP875.94

*price indicative

Packaging Options:
RS Stock No.:
204-7217
Mfr. Part No.:
SiJ128LDP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

25.5A

Maximum Drain Source Voltage Vds

80V

Series

SiJ128LDP

Package Type

SO-8

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

15.6mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

22.3W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

30nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5.25mm

Height

6.25mm

Width

1.14 mm

Automotive Standard

No

The Vishay N-Channel 80 V (D-S) MOSFET has a very low Qg and Qoss reduce power loss and improve efficiency. It has a very low Qg and Qoss reduce power loss and improve efficiency.

TrenchFET Gen IV power MOSFET

100 % Rg and UIS tested

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