STMicroelectronics ST Type N-Channel MOSFET, 25 A, 600 V Depletion, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

PHP246,415.00

(exc. VAT)

PHP275,985.00

(inc. VAT)

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Per Reel*
1000 - 1000PHP246.415PHP246,415.00
2000 +PHP240.909PHP240,909.00

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RS Stock No.:
202-5495
Mfr. Part No.:
STB33N60DM6
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

600V

Series

ST

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.115Ω

Channel Mode

Depletion

Typical Gate Charge Qg @ Vgs

35nC

Maximum Power Dissipation Pd

190W

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

25 V

Maximum Operating Temperature

150°C

Length

10.4mm

Width

4.6 mm

Height

15.85mm

Standards/Approvals

No

Automotive Standard

No

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.

Extremely high dv/dt ruggedness

Zener-protected

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