STMicroelectronics SCT SiC N-Channel MOSFET Module, 45 A, 1200 V Depletion, 3-Pin HiP247 SCTWA30N120
- RS Stock No.:
- 202-5494
- Mfr. Part No.:
- SCTWA30N120
- Manufacturer:
- STMicroelectronics
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 202-5494
- Mfr. Part No.:
- SCTWA30N120
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 45 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Series | SCT | |
| Package Type | HiP247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.09 Ω | |
| Channel Mode | Depletion | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 45 A | ||
Maximum Drain Source Voltage 1200 V | ||
Series SCT | ||
Package Type HiP247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.09 Ω | ||
Channel Mode Depletion | ||
Maximum Gate Threshold Voltage 3.5V | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Very fast and robust intrinsic body diode
Low capacitance
Low capacitance
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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