Vishay EF Type N-Channel MOSFET, 29 A, 650 V Enhancement, 3-Pin TO-220 SiHP105N60EF-GE3

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Subtotal (1 reel of 50 units)*

PHP11,230.80

(exc. VAT)

PHP12,578.50

(inc. VAT)

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Per Reel*
50 +PHP224.616PHP11,230.80

*price indicative

RS Stock No.:
200-6794
Mfr. Part No.:
SiHP105N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

650V

Series

EF

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

88mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

53nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

208W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

4.65 mm

Length

10.52mm

Height

14.4mm

Automotive Standard

No

The Vishay SiHP105N60EF-GE3 is a EF series power MOSFET with fast body diode.

4th generation E series technology

Low figure-of-merit

Low effective capacitance

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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