Vishay SQD10950E N-Channel MOSFET, 11.5 A, 250 V Enhancement, 3-Pin TO-252 SQD10950E_GE3

This image is representative of the product range

Subtotal (2000 units, on reels of 2000)*

PHP93,782.00

(exc. VAT)

PHP105,036.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from March 08, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Reel*
2000 +PHP46.891PHP93,782.00

*price indicative

RS Stock No.:
200-6792
Mfr. Part No.:
SQD10950E_GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

11.5A

Maximum Drain Source Voltage Vds

250V

Package Type

TO-252

Series

SQD10950E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

16nC

Maximum Power Dissipation Pd

62W

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Length

6.73mm

Height

10.41mm

Standards/Approvals

No

Width

2.38mm

Automotive Standard

AEC-Q101

The Vishay SQD10950E_GE3 is a automotive N-channel 250V (D-S) 175°C MOSFET.

TrenchFET power MOSFET

Package with low thermal resistance

100 % Rg and UIS tested

AEC-Q101 qualified

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy